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Additional info for Molecular Beam Epitaxy of III–V Compounds: A Comprehensive Bibliography 1958–1983
Example text
Technol. K. High-frequency conductivity of semiconductors with superlattice Sov. Phys. Semicond. 12 1149-1152 * Fiz. Tekh. Poluprovodn. A. Electronic properties of modulation-doped GaAs-AlxGal-xAs superlattices Inst. Phys. Conf. Ser. A. Heating photoconductivity in a semiconductor with a superlattice Sov. Phys. Semicond. 12 629-632 * Fiz. Tekh. Poluprovodn. T. The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGal-xAs DH lasers Appl.
Lett. L. The growth of unintentionally doped layers of GaAs using molecular beam epitaxy Pr·oc:. Southeastcon '78 Reg. 3 Conf. (IEEE, New York, 1978) 380-383 (1978) Ref. J. Emissivity determination of semiconductor substrates to measure their temperatures with an infrared thermometer system Proc. Int. Symp. MECD 78, Athens, June 26 - 29, 1978, Eds. M. H. Hamza and S. G. , Wiegmann,W. Electron mobilities in modulation-doped semiconductor heterojunction superlattices Appl. Phys. Lett. 33 665-667 (1978) 229 R Esaki, La Semiconductor devices in perspective - discovery of and recent developments in tunneling devices Phys.
Growth of A12D3 layer on MBE GaAs Phys. Status Solidi A 45 K175-K177 (1978) 43 44 Ref. C. Integrated multijunction GaAs photodetector with high output voltage Appl. Phys. Lett. H. Fundamentals of molecular beam epitaxy J. Jpn. Assoc. Y. 67As)heterojunctions Appl. Phys. Lett. Y. AIGaAs-GaAs double-heterostructure small-area light-emitting diodes by molecular-beam epitaxy Appl. Phys. Lett. Y. Cryogenic millimeter-wave receiver using molecular beam epitaxy diodes IEEE Trans. Microwave Theory Techn.