By E. A. Brener, M. B. Geilikman, E. D. Temkin (auth.), Kh. S. Bagdasarov, É. L. Lube (eds.)
Papers from the 6th All-Union convention on progress of Crystals include quantity sixteen of this sequence. The articles have been selected with the intention to extra totally elucidate the fundamental difficulties of crystal progress as mirrored in household and overseas reports and in unique experiences. This quantity includes six elements. half I is dedicated to mechanisms of crystal development which are vital for creation of fabrics with given houses. This half examines the temporal evolution of an inhomogeneous kingdom and the array of semicellular and eutectic buildings in the course of microstructure formation, the impression of impurity at the nonequi librium emptiness focus in a becoming crystal, and the position of soluble and insoluble impurities within the delivery and development of crystals. half II bargains with the synthesis and electrophysical homes of novel stable electrolytes which are promis ing for functional use, research and correlation of the massive quantity of knowledge on development through the Bridgman-Stockbar ger approach to unmarried crystals of fluorite levels faraway from stoichiometry, and the hydrothermal chemistry and development of hexagonal germanium dioxide.
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In particular, O's-n can be stated in the form °s-n = 'Y + a: (5 - E), (8) where y is the chemical term which characterizes the magnitude and type of chemical bond and a(d - E) is the structural term which depends on the degree of discrepancy in parameters which join the planes of the nucleus and substrate d = Mia, and the shift modulus E. Su 2 (9) where C is the elasticity constant and Mv is the specific entropy of fusion. 2 Experiment. Results of an experimental investigation of cc nucleation on solid isomorphOUS surfaces are reviewed in [4, 5].
T. Bublik, M. G. MiI'vidskif, and V. B. Osvenskif, "Nature and behavior of point defects in doped single crystals of A3B5 compounds," Izv. JYssh. Uchebn. 1, 7-22 (1980). L B. Ta, H. M. Hobgood, and R. N. Thomas, "Evidence of the role of boron in undoped GaAs grown by liquid encapsulated Czochralski," AppL Phys. Lett, 41, No. 11, 1091-1093 (1982). E. V. Solov'eva, N. S. Rytova, M. G. MiI'vidskii, and N. V. Ganina, "Electrical properties of gallium arsenide doped with isovalent impurities (GaAs:Sb, GaAs:In)," Fiz.
The cc nucleation kinetics were studied in detail only for Sn. The range of undercoolings for 5080 g samples at cooling rates of 5-7°K/sec were determined for the remaining metals. Experimental results are given in Table 4. It follows from these data that all soluble impurities, independent of their surface activity at the melt-vapor interface, practically do not affect undercooling of metals, with the exception of Te in Sn. However, a definite effect of these additives (Fig. 9a) is revealed on the kinetic curves of J(t11) for Sn.