By Nuclear and Space Radiation Effects Conference Short Course 1999

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Sample text

Although SEGR appears to be a true single-ion effect, there is no question that an accumulated fluence of particles does introduce damage to the oxide. This damage (termed precursor ion damage in [209]) does not affect the SEGR threshold, but does increase capacitor leakage currents. 7 shows measured I-V curves for a 7-nm capacitor after exposure to successive fluences of Au ions at increasing bias voltages [209]. The fluence step between each curve is 106 ions/cm2. 7 V, increasing leakage currents beyond 2 V are observed with accumulated particle fluence.

7 V. 4 ions/cm2/year with LET ≥ 40 MeV-cm2/mg), precursor ion damage is not expected to have any practical impact on reliability in space. For further information on particle-induced damage effects in thermal and nitrided oxides, the reader is directed to [209]. SEGR has been investigated in oxides thinner than 5 nm [208,209]. These oxides can behave fundamentally differently than thicker oxides. Specifically, they often exhibit a soft breakdown characteristic rather than the hard breakdown shown in Fig.

The reader is referred to many excellent reviews and analyses of the subject for further information [172,174-178,180-186]. As mentioned above, the latchup condition is triggered when the parasitic BJTs inherent in CMOS turn “on”, establishing a positive feedback loop. For SEL, the triggering involves four distinct steps, as described by Johnston, et al. [174]: 1) The particle strike induces a transient current in the well-substrate junction, which in turn results in a voltage drop within the well.

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