By J. Y. Andersson, L. Lundqvist (auth.), Emmanuel Rosencher, Børge Vinter, Barry Levine (eds.)
This e-book includes the lectures added on the NATO complicated examine Workshop at the "Intersubband Transistions in Quantum Wells" held in Cargese, France, among the t nine h and the 14th of September 1991. The urge for this Workshop was once justified by way of the striking progress of labor facing this topic over the past or 3 years. certainly, because of contemporary progresses of epitaxial progress innovations, reminiscent of Molecular Beam Epitaxy, it really is now attainable to gain semiconductor layers ( e.g. GaAs) with thicknesses managed inside one atomic layer, sandwiched among insulating layers (e.g. AlGaAs). whilst the semiconducting layer is particularly skinny, i.e. below 15 nm, the strength of the companies such as their movement perpendicular to those layers is quantized, forming subbands of allowed energies. as a result of the low potent plenty in those semiconducting fabrics, the oscillator strengths similar to intersubband transitions are tremendous huge and quantum optical results turn into great within the five - 20 ~ diversity: photoionization, optical nonlinearities, ... in addition, a very good theoretical shock is that - because of the robustness of the powerful mass thought - those quantum wells are a true existence materialization of our outdated textual content e-book one-dimensional quantum good excellent. advanced actual phenomena may perhaps then be investigated on an easy version system.
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Additional info for Intersubband Transitions in Quantum Wells
Example text
4(a), where O*t=O*b. M!. 027 e v E=O Fig . 3. Schematic illustration of a typical quantum well detector configuration. The subband levels are given by El and E 2 . - ! 4. Curve (a) is a plot of the thermal-excitationlimited detectivity O*t at A=10~m vs temperature of the GaAs quantum well detector. Curve (b) is a plot of the acceptance angle ab which results in O*b = 0\ (BLIP) for the background conditions stated in the figure. 25 cooled to T < 4SoK in order to become background limited. 4(b) is a plot of the acceptance angle 8b for which O*b is equal to O*t' assuming a black-body 300 0 K background.
45 InGoAs/lnP ~ 2
6. 0 ~. 7 for GaAs/A1GaAs and HgCdTe, respectively. 6. 7. The plots show that the thermal generation rate at any specific temperature and cutoff is approximately five order of magnitude smaller for the MCT detector than for the GaAs MQW detector. This translates into a cooling requirement of up to an additional 50 0 K for the intersubband detector to achieve the same performance as HgCdTe. Comparing the detectors on the basis of peak detectivities, at 80 0 K the two superlattices considered here would exhibit maximum values of D*I..