By H. Matsunami (auth.), Dr. Mahmud M. Rahman, Dr. Cary Y.-W. Yang, Dr. Gary L. Harris (eds.)
This quantity includes written models of the papers awarded on the moment Inter nationwide convention on Amorphous and Crystalline Silicon Carbide and comparable fabrics (ICACSC 1988), which used to be held at Santa Clara college on Decem ber 15 and sixteen, 1988. The convention the 1st ICACSC held at Howard college, Washington DC, in December 1987 and endured to supply an in ternational discussion board for dialogue and alternate of principles and effects protecting the present prestige of analysis on SiC and similar fabrics. ICACSC 1988 attracted one zero five contributors from 5 nations. The monstrous bring up within the variety of papers in comparison with the former yr is a sign of the transforming into curiosity during this box. Of the forty five papers awarded on the convention, 36 refereed manuscripts are incorporated during this quantity, whereas the rest nine seem as abstracts. The six invited papers supply distinct reports of modern effects on amorphous and crystalline silicon carbide fabrics and units, in addition to diamond skinny motion pictures. the amount is split into six elements, each one protecting a tremendous subject of the conference.
Read or Download Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988 PDF
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Additional resources for Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988
Sample text
Si-face o p-ep; layer C-face -- --~- ......... ~ .... .... Fig. 14 Relationship between Hall Mobility and Carrier Concentration . . 1------______ ! 'oW" l /p-type electrode (AlIT i) 'TmOFO,matioo Ii! od_ I IN-type electrode (Ni/Au) 'Dicing 'Cleaving 'Coaling Fig. 15 Fabrication Process for the SiC Blue LEOs diffused Al was about 200 A . The profile of Ii changes little before and after heat treatment according to SIMS analysis . An electrode for n-type SiC has also been developed using nickel and gold as the main materials .
Suzuki, M. Yoshida and S. Nakajima: J. Appl. 1657-1659 4. Y. Hattori, D. Kruangam, T. Toyama, H. Okamato and Y. Hamakawa : 3rd Intl. Photovoltaic Sci. & Eng. , Tokyo, Tech. Dig. pp171-174 (1987) 5. M. M, Rahman and S. Furukawa: Jpn. J. Appl. , 23, pp515-524 (1984) 6. T. Fukazawa, K. Sasaki and S. Furukawa: to be submitted 53 High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method M. Nishikuni, H. Dohjoh, K. Ninomiya, N. Nakamura, T. Matsuoka, S. Tsuda, S. Nakano, M.
J. Kim, R. F. Davis: Appl. Phys. , ~ (4), 203 (1987). 9 R. T. Holm, P. H. Klein, P. E. R. : J. Appl. , QU, (4), 1479 . (1986). 25 Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, and T. , 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan Undoped inch-sized n-type single crystal ingots of 6H-SiC have been successfully fabricated, and degradation (emission color shift from blue to greenish-blue) of SiC blue LEOs prepared using off-angle substrates is effectively prevented.